Panasonic Transistors 2SC3936G Specification Sheet

Transistors
2SC3936G
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
• Optimum for RF amplification, oscillation, mixing, and IF of
FM/AM radios
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Forward current transfer ratio
Transition frequency
Reverse transfer capacitance
(Common emitter)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: April 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol Rating
V 30
CBO
V 20
CEO
V
EBO
I 30
C
P 150
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
CBO C
V I
CEO C
V I
EBO E
*
h V
FE CE
f V
T CB
C V
re CB
B C
70 to 160 110 to 250
Unit
V
V
5 V
mA
mW
°C
°C
Conditions
= 10 µA, I = 0
E
= 2 mA, I = 0
B
= 10 µA, I = 0
C
= 10 V, I = 1 mA
C
= 10 V, I = −1 mA, f = 200 MHz
E
= 10 V, I = −1 mA, f = 10.7 MHz
E
SJC00362AED
■ Package
• Code
SMini3-F2
• Marking Symbol: K
• Pin Name
1. Base
2. Emitter
3. Collector
Min Typ Max
30
20
5
70 250
150 230
1.3
Unit
V
V
V

MHz
pF
1