Panasonic 2SC5845 Specification Sheet

Transistors
2SC5845
Silicon NPN epitaxial planar type
For general amplification
■ Features
High forward current transfer ratio h
Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine pack-
ing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Collector output capacitance
(Common base, input open circuited)
Transition frequency
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
25 C
a
Symbol Rating
V 60
CBO
V 50
CEO
V 7
EBO
I 100
C
I 200
CP
P 200
C
T 150
j
T 55 to 150
stg
25 C 3 C
a
Symbol
V I 10
CBO C
V I 2 mA, I
CEO C
V I 10
EBO E
I V
CBO CB
I V
CEO CE
h V
FE CE
V I 100 mA, I
CE(sat) C
C V
ob CB
f V
T CB
SJC00297AED
10˚
Unit
V
V
V
mA
mA
Marking Symbol: 7M
mW
C
C
Conditions
, I 0
E
0
B
, I 0
C
20 V, I 0
E
10 V, I 0
B
10 V, I 2 mA
C
10 mA
B
10 V, I 0, f 1 MHz
E
10 V, I 2 mA, f = 200 MHz
E
+0.10
0.40
–0.05
0.16
3
1 2
(0.95) (0.95)
1.9 ±0.1
+0.20
2.90
–0.05
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Min Typ Max
60
50
7
0.1
100
160 460
0.1 0.3
2.2
100
Unit: mm
+0.10
–0.06
Unit
V
V
V
A
A
V
pF
MHz
1