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Philips Semiconductors
TOPFET high side switch
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
Continuous supply voltage
BG
I
Continuous load current
L
P
Total power dissipation
D
T
Storage temperature
stg
T
Continuous junction temperature
j
T
Mounting base temperature
sold
Reverse battery voltages
-V
Continuous reverse voltage
BG
-V
Peak reverse voltage
BG
Application information
R
, R
External resistors
I
S
Input and status
I
, I
Continuous currents
I
S
I
, I
Repetitive peak currents
I
S
Inductive load clamping
E
Non-repetitive clamping energy
BL
ESD LIMITING VALUE
SYMBOL PARAMETER
V
Electrostatic discharge capacitor
C
voltage
THERMAL CHARACTERISTICS
SYMBOL PARAMETER
Thermal resistance
R
Junction to mounting base
th j-mb
1 For normal continuous operation. A higher T
to protect the switch.
2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must
limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the T
rating must be observed.
3 To limit currents during reverse battery and transient overvoltages (positive or negative).
4 Of the output power MOS transistor.
September 2001
CONDITIONS
T
mb
T
mb
1
during soldering
2
3
to limit input, status currents
δ ≤ 0.1, tp = 300 µs
I
= 10 A, V
L
T
j
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
CONDITIONS
4
-
is allowed as an overload condition but at the threshold T
j
≤ 95˚C
≤ 25˚C
= 16 V
BG
≤ 150˚C prior to turn-off
2
Product specification
PIP3210-R
MIN.
MAX.
UNIT
0
50
-
20
-
67
-55
175
-
150
-
260
-
16
-
32
3.2
-
-5
5
mA
-50
50
mA
-
150
MIN.
MAX.
UNIT
-
2
MIN.
TYP.
MAX.
-
1.52
1.86
the over temperature trip operates
j(TO)
Rev 1.000
V
A
W
˚C
˚C
˚C
V
V
kΩ
mJ
kV
UNIT
K/W
j
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