THOMSON STP6NA60 Applications

TYPE V
DSS
STP6NA60 600 V
STP6NA60FI 600 V
TYPICAL R = 1
DS(on)
30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
LOW INTRINSIC CAPACITANCES
GATE GHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low R and gate charge, unequalled
DS(on)
ruggedness and superior switching performance.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V Drain-source Voltage (V
D S
V Drain-gate Voltage (R
DG R
V Gate-source Voltage
GS
I Drain Current (continuous) at T
D
I Drain Current (continuous) at T
D
I ( ) Drain Current (pulsed)
D M
P Total Dissipation at T
tot
Derating Factor
V Insulation Withstand Voltage (DC)
ISO
T Storage Temperature
stg
T Max. Operating Junction Temperature
j
( ) Pulse width limited by safe operating area
November 1996
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
R I
DS( on) D
< 1.2 6.5 A
< 1.2 3.9 A
o
C
Parameter
= 0)
GS
= 20 k )
G S
o
= 25 C
c
o
= 100 C
c
o
= 25 C
c
STP6NA60
STP6NA60FI
3
2
1
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
Value
STP6NA60 STP6NA60FI
600
600
30
6.5 3.9
4.3 2.6
26
125
1 0.36
2000
-65 to 150
150
3
2
1
Unit
V
V
V
A
A
26 A
45 W
o
W/ C
V
o
C
o
C
1/10