LG GCC-4241N Service Manual page 38

IC602 (MX29LV400BTC)
GENERAL DESCRIPTION
The MX29LV400T/B is a 4-mega bit Flash memory organized as 512K bytes of 8 bits or 256K words of 16 bits.
MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access
memory. The MX29LV400T/B is packaged in 44-pin SOP, 48-pin TSOP and 48-ball CSP. It is designed to be
reprogrammed and erased in system or in standard EPROM programmers.
The standard MX29LV400T/B offers access time as fast as 55ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention, the MX29LV400T/B has separate chip enable
(CE) and output enable (OE) controls.
MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming.
The MX29LV400T/B uses a command register to manage this functionality. The command register allows for
100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining
maximum EPROM compatibility.
MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The
MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combination of
advanced tunnel oxide processing and low internal electric fields for erase and program operations produces
reliable cycling. The MX29LV400T/B uses a 2.7V~3.6V VCC sup-ply to perform the High Reliability Erase and
auto Program/ Erase algorithms.
The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up
protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.
40