Cypress Semiconductor STK12C68-5 Specification Sheet

Cypress Semiconductor STK12C68-5 Specification Sheet

64 kbit (8k x 8) autostore nvsram

Advertisement

Quick Links

Features
35 ns and 55 ns access times
Hands off automatic STORE on power down with external
68 µF capacitor
STORE to QuantumTrap™ nonvolatile elements is initiated
by software, hardware, or AutoStore™ on power down
RECALL to SRAM initiated by software or power up
Unlimited Read, Write, and Recall cycles
1,000,000 STORE cycles to QuantumTrap
100 year data retention to QuantumTrap
Single 5V+10% operation
Military temperature
28-pin (300mil) CDIP and 28-pad LCC packages
Logic Block Diagram
Cypress Semiconductor Corporation
Document Number: 001-51026 Rev. **
64 Kbit (8K x 8) AutoStore nvSRAM
Quantum Trap
A
5
A
6
A
7
STATIC RAM
A
8
ARRAY
128 X 512
A
9
A
11
A
12
DQ
COLUMN I/O
0
DQ
1
COLUMN DEC
DQ
2
DQ
3
DQ
4
DQ
A
A
A
A
A
0
1
4
5
2
3
DQ
6
DQ
7
198 Champion Court
STK12C68-5 (SMD5962-94599)

Functional Description

The Cypress STK12C68-5 is a fast static RAM with a nonvol-
atile element in each memory cell. The embedded nonvolatile
elements incorporate QuantumTrap technology producing the
world's most reliable nonvolatile memory. The SRAM provides
unlimited read and write cycles, while independent nonvolatile
data resides in the highly reliable QuantumTrap cell. Data
transfers from the SRAM to the nonvolatile elements (the
STORE operation) takes place automatically at power down.
On power up, data is restored to the SRAM (the RECALL
operation) from the nonvolatile memory. Both the STORE and
RECALL operations are also available under software control.
A hardware STORE is initiated with the HSB pin.
V
V
CC
CAP
128 X 512
POWER
STORE
CONTROL
RECALL
STORE/
RECALL
CONTROL
SOFTWARE
A
10
,
San Jose
CA 95134-1709
HSB
-
A
A
DETECT
0
12
OE
CE
WE
408-943-2600
Revised March 02, 2009
[+] Feedback

Advertisement

Table of Contents
loading
Need help?

Need help?

Do you have a question about the STK12C68-5 and is the answer not in the manual?

Questions and answers

Subscribe to Our Youtube Channel

Summary of Contents for Cypress Semiconductor STK12C68-5

  • Page 1: Functional Description

    STK12C68-5 (SMD5962-94599) 64 Kbit (8K x 8) AutoStore nvSRAM Functional Description The Cypress STK12C68-5 is a fast static RAM with a nonvol- atile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory. The SRAM provides unlimited read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell.
  • Page 2: Pin Definitions

    (connection optional). Power Supply AutoStore Capacitor. Supplies power to nvSRAM during power loss to store data from SRAM to nonvolatile elements. Document Number: 001-51026 Rev. ** STK12C68-5 (SMD5962-94599) Figure 2. Pin Diagram - 28-Pin LLC Description Page 2 of 18...
  • Page 3: Device Operation

    Device Operation The STK12C68-5 nvSRAM is made up of two functional compo- nents paired in the same physical cell. These are an SRAM memory cell and a nonvolatile QuantumTrap cell. The SRAM memory cell operates as a standard fast static RAM. Data in the...
  • Page 4 V cycle is automatically initiated and takes t If the STK12C68-5 is in a Write state at the end of power up RECALL, the SRAM data is corrupted. To help avoid this situation, a 10 Kohm resistor is connected either between WE...
  • Page 5: Data Protection

    CE or WE is detected. This protects against inadvertent writes during power up or brown out conditions. Noise Considerations The STK12C68-5 is a high speed memory. It must have a high frequency bypass capacitor of approximately 0.1 µF connected between V...
  • Page 6: Best Practices

    3. IO state assumes OE < V . Activation of nonvolatile cycles does not depend on state of OE. Document Number: 001-51026 Rev. ** STK12C68-5 (SMD5962-94599) ■ Power up boot firmware routines must rewrite the nvSRAM into the desired state. While the nvSRAM is shipped in a...
  • Page 7: Maximum Ratings

    5. CE > V does not produce standby current levels until any nonvolatile cycle in progress has timed out. Document Number: 001-51026 Rev. ** STK12C68-5 (SMD5962-94599) Voltage on DQ Power Dissipation... 1.0W DC output Current (1 output at a time, 1s duration) ... 15 mA...
  • Page 8: Thermal Resistance

    Input and Output Timing Reference Levels ...1.5 Note 6. These parameters are guaranteed by design and are not tested. Document Number: 001-51026 Rev. ** STK12C68-5 (SMD5962-94599) 1,000 Test Conditions = 25°C, f = 1 MHz, = 0 to 3.0 V...
  • Page 9: Switching Waveforms

    7. WE and HSB must be High during SRAM Read cycles. 8. Device is continuously selected with CE and OE both Low. 9. Measured ±200 mV from steady state output voltage. Document Number: 001-51026 Rev. ** STK12C68-5 (SMD5962-94599) 35 ns Description 55 ns...
  • Page 10 10. If WE is Low when CE goes Low, the outputs remain in the high impedance state. 11. HSB must be high during SRAM Write cycles. 12. CE or WE must be greater than V during address transitions. Document Number: 001-51026 Rev. ** STK12C68-5 (SMD5962-94599) 35 ns Description DATA VALID HZWE...
  • Page 11 15. CE and OE low and WE high for output behavior. 16. HSB is asserted low for 1us when V drops through V takes place. Document Number: 001-51026 Rev. ** STK12C68-5 (SMD5962-94599) Description ) to HSB Low SWITCH Figure 12. AutoStore/Power Up RECALL SWITCH .
  • Page 12 17. The software sequence is clocked on the falling edge of CE without involving OE (double clocking aborts the sequence). 18. The six consecutive addresses must be read in the order listed in Document Number: 001-51026 Rev. ** STK12C68-5 (SMD5962-94599) [18] 35 ns...
  • Page 13 Hardware STORE Low to STORE Busy HLBL Switching Waveform Note 19. t is only applicable after t is complete. DHSB STORE Document Number: 001-51026 Rev. ** STK12C68-5 (SMD5962-94599) Description Figure 14. Hardware STORE Cycle STK12C68-5 Unit Page 13 of 18 [+] Feedback...
  • Page 14: Part Numbering Nomenclature

    Part Numbering Nomenclature STK12C68 - 5 C 35 M SMD5962 - 94599 01 MX X Document Number: 001-51026 Rev. ** STK12C68-5 (SMD5962-94599) Package: C = Ceramic 28-pin 300 mil DIP (gold lead finish) = Ceramic 28-pin 300 mil DIP (Solder dip finish)
  • Page 15: Ordering Information

    STK12C68-5L35M STK12C68-5C55M STK12C68-5K55M STK12C68-5L55M The above table contains Final information. Contact your local Cypress sales representative for availability of these parts Document Number: 001-51026 Rev. ** STK12C68-5 (SMD5962-94599) Package Diagram Package Type 001-51695 28-pin CDIP (300 mil) 001-51695 28-pin CDIP (300 mil)
  • Page 16: Package Diagrams

    Package Diagrams Figure 15. 28-Pin (300-Mil) Side Braze DIL (001-51695) Document Number: 001-51026 Rev. ** STK12C68-5 (SMD5962-94599) 001-51695 ** Page 16 of 18 [+] Feedback...
  • Page 17 1. ALL DIMENSION ARE IN INCHES AND MILLIMETERS [MIN/MAX] 2. JEDEC 95 OUTLINE# MO-041 3. PACKAGE WEIGHT : TBD Document Number: 001-51026 Rev. ** STK12C68-5 (SMD5962-94599) Figure 16. 28-Pad (350-Mil) LCC (001-51696) 001-51696 ** Page 17 of 18 [+] Feedback...
  • Page 18 Document History Page Document Title: STK12C68-5 (SMD5962-94599), 64 Kbit (8K x 8) AutoStore nvSRAM Document Number: 001-51026 Orig. of ECN No. Change 2666844 GVCH/PYRS Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at cypress.com/sales.

This manual is also suitable for:

Smd5962-94599

Table of Contents

Save PDF