Switching Performance Of Igbt At Steady State - Infineon IKW40N65WR5 Manual

5 kw two-channel interleaved ccm pfc eval board
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5 kW two-channel interleaved CCM PFC EVAL board
IKW40N65WR5, IDW60C65D1 and 1ED44175 in high frequency PFC application
System performance
Figure 25
Detail view of interleaving operation at full load at V
4.4

Switching performance of IGBT at steady state

The design for this board is aimed at achieving high efficiency by using 650V TRENCHSTOP™ 5 WR5 IGBT
IKW40N65WR5 as the main switch in a high-frequency interleaved PFC application. Compared to Infineon's H3
IGBT, the WR5 IGBT has lower conduction and switching losses, enabling the MOSFET to be replaced by a WR5
IGBT in up to 100 kHz applications.
The following three waveforms show switching performances of IKW40N65WR5 with the low side gate driver
1ED44175. For considering the driver's current capability, in this design, the turn-on gate resistance for each
KW40N65WR5 is 5.1 Ω and turn-off resistance is 3 Ω.Smaller gate resistance for turn-on and turn-off helps to
decrease turn-on and turn-off losses of the IGBT. However, during the design process, there is always a trade-off
between achieving high efficiency and EMI. Customers need to make greater effort to reduce the noise by high
dv/dt and high di/dt in high-frequency applications.
Figure 26
Switching waveforms of IGBT at V
User guide
I
= Green, I
=Yellow, I
IN
L1
V
= Green, V
=Yellow, I
CE
GE
=180 V
IN
30 of 41
=Red,V
=Blue
L2
IN
=264 V
IN
AC
=Red,V
=Blue
L1
OUT
at full load
AC
v1.0
2021-03-05

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