ON Semiconductor NCV51705 User Manual

EVBUM2528/D
NCP51705 Mini Evaluation
Board User's Manual
NCP51705 SiC Driver Evaluation Board
for Existing or New PCB Designs
INTRODUCTION
Purpose
This document describes the use and applications for the
NCP51705 SiC driver mini EVB. The EVB is designed on
a four layer PCB and includes the NCP51705 driver and all
the necessary drive circuitry. The EVB also includes an
on−board digital isolator and the ability to solder any
MOSFET or SiC MOSFET in a T0247 high voltage
package. The EVB does not include a power stage and is
generic from the point of view that it is not dedicated to any
particular topology. It can be used in any low−side or
high−side power switching application. For bridge
configurations two or more of these EVBs can be configured
in a totem pole type drive configuration. The EVB can be
considered as an isolator+driver+T0247 discrete module.
NCP51705 Description
The NCP51705 driver is designed to primarily drive SiC
MOSFET transistors. To achieve the lowest possible
© Semiconductor Components Industries, LLC, 2017
April, 2019 − Rev. 1
EVAL BOARD USER'S MANUAL
conduction losses, the driver is capable of delivering the
maximum allowable gate voltage to the SiC MOSFET
device. By providing high peak current during turn−on and
turn−off, switching losses are also minimized. For improved
reliability, dV/dt immunity and even faster turn−off, the
NCP51705 can utilize its on−board charge pump to generate
a user selectable negative voltage rail.
For full compatibility and to minimize the complexity of
the bias solution in isolated gate drive applications the
NCP51705 also provides an externally accessible 5V rail to
power the secondary side of digital or high speed opto
isolators.
The NCP51705 offers important protection functions
such as under−voltage lockout monitoring for the bias power
and thermal shutdown based on the junction temperature of
the driver circuit.
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Publication Order Number:
EVBUM2528/D