Infineon 2ED4820-EM EB2 2HSV48 User Manual page 6

2ED4820-EM EB2 2HSV48
Introduction to the 2ED4820-EM EB2 2HSV48
1.4.2 High side current sense:
This configuration is used to sense the current thanks to a low ohmic shunt connected to the supply node:
Figure 6 Configuration for low side current sense.
1.5 Overview of the power configurations which can be tested
There are at least three different power configurations which can be tested.
1.5.1 Common drain power configuration (1 single load):
Channel A drives the high side MOS of low-ohmic path on OUT3
•
Channel B drives the low side MOS of low-ohmic path on OUT3
•
Optional capacitive pre-charge with discrete level shifter, connected thanks to a jumper on J8
•
This configuration can be used either with low side (Config 1) or with high side current sense (Config 2):
VCP
SA
GA
VBAT
GB
48V
SB
2ED4820-EM
1
ISP
CSO
ISN
Figure 7 Common drain.
User Manual
www.infineon.com
Level
Shifter
GPIO
MCU
2x
4.7W
Optional
Capacitor
Pre-charge
LOAD
Shunt
VCP
CSO
48V
2ED4820-EM
2
page 6 of 26
ISP
Shunt
ISN
SA
GA
VBAT
GB
2x 2x
4.7W 4.7W
SB
Capacitor
Pre-charge
LOAD
2022-01-20
Level
Shifter
GPIO
MCU
Optional
1.0