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Panasonic MA3X786 (MA786) Specification Sheet

Schottky barrier diodes (sbd) silicon epitaxial planar type

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Schottky Barrier Diodes (SBD)
MA3X786
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
• Forward current (Average) I
possible
• Optimum for high frequency rectification because of its short
reverse recovery time t
• Low forward voltage V
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Peak forward current
Forward current (Average)
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz.
4. * : t
measurement circuit
rr
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: April 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA786)
= 100 mA rectification is
F(AV)
rr
and good rectification efficiency
F
= 25°C
a
Symbol
Rating
V
30
R
V
30
RRM
I
300
FM
I
100
F(AV)
I
1
FSM
T
125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V
I
F
F
I
V
R
C
V
t
t
I
rr
F
I
rr
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
Note) The part number in the parenthesis shows conventional part number.
Unit
V
EIAJ: SC-59
V
Marking Symbol: M3T
mA
mA
Internal Connection
A
°C
°C
Conditions
= 100 mA
= 30 V
R
= 0 V, f = 1 MHz
R
= I
= 100 mA
R
= 0.1 I
= 100 Ω
, R
R
L
Input Pulse
t
t
r
p
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00085CED
+0.10
0.40
–0.05
3
1
2
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
10˚
Mini3-G1 Package
3
1
2
Min
Typ
Max
0.55
20
2.0
Output Pulse
t
rr
I
F
t
= 0.1 I
I
rr
R
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
Unit: mm
+0.10
0.16
–0.06
1: Anode
2: N.C.
3: Cathode
Unit
V
µA
15
pF
ns
1

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Summary of Contents for Panasonic MA3X786 (MA786)

  • Page 1 Schottky Barrier Diodes (SBD) MA3X786 (MA786) Silicon epitaxial planar type For super high speed switching For small current rectification ■ Features • Forward current (Average) I F(AV) possible • Optimum for high frequency rectification because of its short reverse recovery time t •...
  • Page 2 MA3X786  V 75°C 25°C = 125°C −20°C −1 −2 Forward voltage V ( V )  T = 30 V −1 −40 ( °C ) Ambient temperature T  V = 125°C 75°C 25°C −1 ( V ) Reverse voltage V ...
  • Page 3 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.

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Ma786