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Sony XC-EU50 Technical Manual Page 14

Sony corporation ccd black-and-white video camera module xc-eu50/eu50ce.
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For setting the shutter speed using the trigger pulse width
HD/VD input
N Continuous HD input/Single VD input
External trigger shutter operation
1
Trigger*
1
Exposure time (Te)*
1
External HD*
1
External VD*
(Single VD)
T: T=10 µ s to 65 ms*
Video out
WEN
*1 This is a signal input from outside. Make sure to
input both HD and VD signals in this case. Input
the signal so that the VD phase aligns with the HD
falling edge.
*2 Exposure time (Te)
Te = Trigger pulse width + 97 µ sec (EIA)
Te = Trigger pulse width + 120 µ sec (CCIR)
(The effective trigger pulse width for the external
trigger shutter operation is between 2 µ s and 1/4 s.)
*3 The normal operation state is chosen when the
trigger pulse width is 1/3 s or more. (By entering a
continuous VD in this section, an image is output.)
The trigger falling edge restores the external
trigger shutter operation. In this case, the area
between the falling edge of a trigger pulse and the
subsequent 50 ms period is an external trigger
input inhibition area. There is no guarantee of
operation for any trigger input selected in this
period.
Trigger pulse width
2
4
1
250 H (EIA)
250 H (EIA)
293 H (CCIR)
293 H (CCIR)
*4 Input the external VD within the period of 10 µ s to
*5 When the external trigger shutter mode changes to
Note
Make sure that the trigger signal and the VD signal
make up a pair.
An image is not output correctly when the next trigger
is input before the image for the previous trigger is
output.
Mode transition state
3
Normal operation*
3
*
5
*
65 ms after the trigger falling edge (1 and 2 in
the figure). There is no guarantee of operation
when any other input is selected. If an invalid
signal is input, the input is changed to a valid
signal and, after several V signals, normal
operation will resume.
the normal operation mode, one WEN signal is
output.
Mode Setting
External input
External trigger
inhibition area
shutter operation
(50 ms)
2
Exposure time
(Te)*
2
µ
min 10
s
2
250 H (EIA)
293 H (CCIR)
14

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