IBM i series Handbook page 36

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Introduction

N o r t h s t a r

Again in 2000, the iSeries lead the industry by delivering the first server with the new

"Silicon-on-Insulator" (SOI) technology. SOI represents a fundamental advance in the way

chips are built. IBM's unique SOI process alters the design of transistors, essentially "turbo

charging" them, so they run faster and use less power. For example, a microprocessor

designed to operate at a given speed can instead be built using SOI technology to achieve

higher speeds. At the same time, if performance levels are held constant, SOI chips can

require as little as one-third the power of today's microchips. Silicon on Insulator is

technology used by the iStar processors. The transistors are built within and on top of a thin

layer of silicon that is on top of an insulating layer. The insulating layer is fabricated by

implanting a thin layer of oxide beneath the primary silicon surface of the wafer.

Pulsar, iStar, and SStar processors use on-chip copper-wiring technology. The Pulsar

processors integrate IBM CMOS7S technology. iStar and SStar processors integrate

CMOS8S technology. Previously, Northstar technology used aluminum for on-chip wiring.

Copper's better conductivity permits thinner wires to be used, which enables the transistors

to be packed closer together. The denser new technology permits additional

micro-architecture methods to improve performance.

Keeping multiple levels of high speed cache is still necessary to keep the processors busy.

Denser processor technology permits more on-chip cache. All this new technology is

implemented on the new iSeries servers.

iSeries Handbook

S i l i c o n - O n - I n s u l a t o r

G i g a p r o c e s s o r

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