Off-Chip Rf Components - LG -V909DW Service Manual

3. TECHNICAL BRIEF

3.6 OFF-CHIP RF COMPONENTS

3.6.1. UMTS PAM
3.6.1.1 W2100,W900 (ACPM-5281)
The ACPM-5281 is a dual-band PAM (Power Amplifier Module) designed for UMTS Band1 and Band8. The
ACPM-5281 meets stringent UMTS linearity requirements. The 4mmx5mm form factor 14-pin surface mount
package is self contained, incorporating 50ohm input and output matching networks. The ACPM-5281
features 5th generation of CoolPAM circuit technology which supports 3 modes – bypass, mid and high
power modes. The CoolPAM is stage bypass technology which enables power amplifier to lower power
consumption. Active bypass feature is added to 5th generation to enhance power added efficiency at low
output range and this technology extends talk time of mobiles more by further saving power amplifier's
current consumption. The power amplifier is manufactured on an advanced InGaP HBT (hetero-junction
Bipolar Transistor) MMIC (microwave monolithic integrated circuit) technology offering state-of-the-art
reliability, temperature stability and ruggedness The Module is housed in a cost effective, small and thin
4x5mm package.
3.6.1.2 W1700 (SKY77703)
The SKY77703 is fully matched Power Amplifier Module designed for use in UMTS4. Its compact 3x3mm
package (including coupler) makes it ideal for today's extremely small data enabled phones. Its RF
performance meets the stringent linearity requirements of HSUPA operation.
The SKY77703 is includes built-in regulator functionality as well as a high performance coupler for maximum
integration and space savings. The 3-Gain state PA die operates in LPM, MPM and HPM to maximize talk time
over the entire range of operating conditions. To simplify the cost/time of calibration while in production the
SKY77703 can be used in 1-bit operation.
3.6.1.3 GSM PAM (ACPM-7868)
The ACPM-7868 is a linear quad-band / multi-mode power amplifier module for both GMSK and 8-PSK
modulation
schemes. There are two amplifier chains, one is to support GSM850/900 bands, and the other is to support
DCS1800/PCS1900 bands. Input and output terminals are internally matched to 50Ω. The PA also contains
internal DC blocking capacitors for RF input and output ports. The power amplifier is manufactured on an
advanced InGaP HBT technology offering state-of-the-art reliability, temperature stability and ruggedness.
This module is housed in a cost effective, extremely small and thin 5mmx5mm package.
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