Schottky Barrier Diodes (SBD)
MA6X718
Silicon epitaxial planar type
For switching
For wave detection
■ Features
• Three isolated elements are contained in one package, allowing
high-density mounting
• Two MA3X704A (MA704A) is contained in one package (of a
type in the same direction)
• Forward voltage V
, optimum for low voltage rectification
F
• Optimum for high frequency rectification because of its short
reverse recovery time t
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
*
Peak forward current
*
Forward current
Junction temperature
Storage temperature
Note) * : Value for single diode
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Detection efficiency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
4. * : t
measurement circuit
rr
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: April 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA718)
rr
= 25°C
a
Symbol
Rating
V
30
R
I
150
FM
I
30
F
T
125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V
I
F1
F
V
I
F2
F
I
V
R
C
V
t
t
I
rr
F
I
rr
η
V
R
L
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
Note) The part number in the parenthesis shows conventional part number.
R
i
10˚
EIAJ : SC-74
Unit
V
Marking Symbol: M2N
mA
Internal Connection
mA
°C
°C
Conditions
= 1 mA
= 30 mA
= 30 V
R
= 1 V, f = 1 MHz
R
= I
= 10 mA
R
= 1 mA , R
= 100 Ω
L
= 3 V
, f = 30 MHz
IN
(peak)
= 3.9 kΩ, C
= 10 pF
L
Input Pulse
t
t
r
p
t
10%
I
F
90%
V
R
= 2 µs
t
I
p
= 0.35 ns
t
I
r
δ = 0.05
R
SKH00112BED
+0.20
2.90
–0.05
1.9
±0.1
(0.95)
(0.95)
4
5
6
3
2
1
+0.10
0.30
–0.05
+0.10
0.50
–0.05
Mini6-G1 Package
4
5
6
3
2
1
Min
Typ
1.5
1.0
65
Output Pulse
t
rr
t
= 1 mA
I
rr
= 10 mA
F
= 10 mA
R
= 100 Ω
L
Unit: mm
+0.10
0.16
–0.06
1 : Cathode 1
2 : Cathode 2
3 : Cathode 3
4 : Anode 3
5 : Anode 2
6 : Anode 1
Max
Unit
0.4
V
1.0
µA
1
pF
ns
%
1