Panasonic Schottky Barrier Diodes MA3S795EG Specification

Schottky Barrier Diodes (SBD)
MA3S795EG
Silicon epitaxial planar type
For switching
For wave detection
 Features
 High-density mounting is possible
 Forward voltage V , optimum for low voltage rectification:V
F
 Optimum for high frequency rectification because of its short
reverse recovery time t
rr
 Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Single
Forward current
Double
Single
Peak forward current
Double
Junction temperature
Storage time
 Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time *
Detection efficiency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
4. * : t measurement circuit
rr
Pulse Generator
(PG-10N)
R = 50 Ω
s
Publication date: October 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol Rating
V 30
R
V 30
RM
30
I
F
20
150
I
FM
110
T 125
j
T –55 to +125
stg
= 25°C±3°C
a
Symbol
V I = 1 mA
F1 F
V I = 30 mA
F2 F
I V = 30 V
R R
C V = 1 V, f = 1 MHz
t R
I = I = 10 mA, I
F R
t
rr
R = 100 W
L
V = 3 V
IN
η
R = 3.9 kW, C
L
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
R = 50 Ω
i
SKH00236AED
 Package
 Code
SSMini3-F3
< 0.3 V
 Pin Name
F
1: Anode 1
2: Anode 2
3: Cathode
Unit
 Marking Symbol: M3D
V
 Internal Connection
V
mA
mA
°C
°C
Conditions
= 1 mA,
rr
, f = 30 MHz
(peak)
= 10 pF
L
Input Pulse
t
t
p
r
t
10%
90%
V
R
t = 2 µs
p
t = 0.35 ns
r
δ = 0.05
3
1 2
Min Typ Max
0.3
1.0
30
1.5
1.0
65
Output Pulse
t
I rr
F
t
I = 1 mA
rr
I = 10 mA
F
I = 10 mA
R
R = 100 Ω
L
Unit
V
mA
pF
ns
%
1