Panasonic Schottky Barrier Diodes MA3J7020G Specifications

Schottky Barrier Diodes (SBD)
MA3J7020G
Silicon epitaxial planar type
For high frequency rectification
■ Features
• Forward current (Average) I
• Small reverse current I
products)
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz.
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: October 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
= 500 mA rectification is possible
F(AV)
(About 1/10 of I of the ordinary
R R
= 25°C
a
Symbol Rating
V 20
R
V 20
RRM
I 500
F(AV)
I 3
FSM
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V I
F1 F
V I
F2 F
I V
R1
I V
R2
C V
t
t I
rr F
I
rr
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
■ Package
• Code
• Pin Name
■ Marking Symbol: M4R
Unit
V
V
■ Internal Connection
mA
A
°C
°C
Conditions
= 10 mA
= 500 mA
= 5 V
R
= 10 V
R
= 0 V, f = 1 MHz
R
= I = 100 mA
R
= 0.1 I = 100 Ω
, R
R L
4. * : t measurement circuit
rr
Input Pulse
t
t
p
r
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00193AED
SMini3-F2
1: Anode
2: N.C.
3: Cathode
3
1 2
Min Typ
0.30
0.50
60
5
Output Pulse
t
rr
I
F
t
= 0.1 I
I
rr R
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
Max Unit
0.40 V
0.55
µA
1
10
pF
ns
1