Switching Diodes
MA3X152D
Silicon epitaxial planar type
For high-speed switching circuits
■ Features
• Short reverse recovery time t
• Small terminal capacitance, C
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Single
Double
Peak forward
Single
current
Double
Non-repetitive peak
Single
*
forward surge current
Double
Junction temperature
Storage temperature
Note) * : t = 1 s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
MA3X152D
MA3X152E
*
Reverse recovery time
MA3X152D
MA3X152E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. * : t
measurement circuit
rr
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: November 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA152WA)
rr
t
= 25°C
a
Symbol
Rating
V
80
R
V
80
RM
I
100
F
150
I
225
FM
340
I
500
FSM
750
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 100 mA
V
I
F
F
= 100 µA
V
I
R
R
= 75 V
I
V
R
R
= 0 V, f = 1 MHz
C
V
t
R
= 10 mA, V
t
I
rr
F
= 0.1 I
I
rr
V
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
Note) The part numbers in the parenthesis show conventional part number.
i
SKF00033CED
, MA3X152E
Unit
10˚
V
V
mA
mA
EIAJ: SC-59
Mini3-G1 Package
mA
Marking Symbol
• MA3X152D: MO
°C
Internal Connection
°C
Conditions
= 6 V
R
= 100 Ω
, R
R
L
Input Pulse
Output Pulse
t
t
p
r
t
10%
I
F
90%
R
= 2 µs
= 10 mA
t
I
p
F
= 0.35 ns
= 6 V
t
V
r
R
δ = 0.05
= 100 Ω
R
L
(MA152WK)
+0.10
0.40
–0.05
0.16
3
1
2
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
MA3X152D MA3X152E
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode1, 2 Cathode 1, 2
• MA3X152E: MU
3
3
1
2
1
E
D
Min
Typ
Max
1.2
80
100
15
2
10
3
t
rr
t
= 0.1 I
I
rr
R
Unit: mm
+0.10
–0.06
2
Unit
V
V
nA
pF
ns
1