Panasonic MA2DF62 Specification Sheet

Fast Recovery Diodes (FRD)
MA2DF62
Silicon Mesa type
For high frequency rectification
 Features
 Super high speed switching characteristic: t
 Low noise type
 Absolute Maximum Ratings T
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse surge voltage
* 1
Forward current (Average)
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Note) * 1: T = 25°C
C
* 2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Reverse recovery time *
Thermal resistance (j-c)
Thermal resistance (j-a)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of
current from the operating equipment.
3. * : t measurement circuit
rr
Publication date: December 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
= 15 ns (typ.)
rr
= 25°C
a
Symbol Rating
V 600
RRM
V 600
RSM
I 10
F(AV)
* 2
I 40
FSM
T 150
j
T -40 to +150
stg
= 25°C±3°C
a
Symbol
V I = 10 A
F F
I V = 600 V
RRM RRM
I = 0.5 A, I
F
t
rr
I = 0.25 A
rr
R
th(j-c)
R
th(j-a)
50 Ω 50 Ω
D.U.T.
5.5 Ω
SKJ00024AED
 Package
 Code
TO-220D-B1
 Pin Name
1: Cathode
2: Anode
Unit
V
 Marking Symbol: MA2DF62
V
A
A
°C
°C
Conditions
= 1.0 A
R
t
rr
I
F
I
R
Min Typ Max Unit
1.8 2.5
30 mA
15 25
3.0 °C/W
63 °C/W
0.25 × I
R
V
ns
1