Zener Diodes
MAYS0750Y
Silicon epitaxial planar type
For ESD protection of high speed signal line
Features
Maintain signal cobs with low insertion loss, distortion.
Absolute Maximum Ratings T
Parameter
* 1
Total power dissipation
Junction temperature
Storage temperature
* 2
Electrostatic discharge
Note) * 1 : P
= 150 mW achieved with a printed circuit board.
T
* 2 : Test method: IEC61000-4-2
(C = 150 pF, R = 330 W, Contact discharge: 10 times)
Electrical Characteristics T
Parameter
Breakdown voltage
*
Reverse current
Terminal capacitance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. * : V
guaranted 20 ms after current flow.
Z
Publication date: February 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol
Rating
P
150
T
T
150
j
T
–55 to +150
stg
ESD
±8
= 25°C±3°C
a
Symbol
V
I
= 1 mA
BR
R
I
V
= 5 V
R
R
C
I
= 0 V, f = 1 MHz
t
R
SKE00031AED
+0.05
0.80
–0.03
Unit
mW
5°
°C
°C
kV
1: Anode
2: Cathode
EIAJ: SC-79
Marking Symbol: CY
Conditions
Min
6.0
Unit: mm
+0.05
0.60
–0.03
+0.05
0.12
–0.02
1
0.01
±0.01
2
0.30
±0.05
+0
0
–0.05
SSMini2-F1 Package
Typ
Max
Unit
7.5
V
2
mA
0.8
pF
1