Schottky Barrier Diodes (SBD)
MA2Z720
Silicon epitaxial planar type
For high frequency rectification
Features
Forward current (Average) I
possible
High-density mounting is possible
Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current (Average)
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz.
4. * : t
measurement circuit
rr
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
R
50
s
Publication date: April 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
500 mA rectification is
F(AV)
25 C
a
Symbol
Rating
V
40
R
V
40
RM
I
500
F(AV)
I
2
FSM
T
125
j
T
55 to 125
stg
25 C
3 C
a
Symbol
V
I
F
F
I
V
R
R
C
V
t
R
t
I
rr
F
I
rr
A
Wave Form Analyzer
(SAS-8130)
R
50
i
Unit
V
V
mA
1: Anode
A
2: Cathode
EIAJ: SC-76
C
Marking Symbol: 2L
C
Conditions
500 mA
35 V
0 V, f
1 MHz
I
100 mA
R
0.1 I
, R
100
L
R
Input Pulse
t
t
p
r
t
10%
90%
V
R
t
2 s
p
t
0.35 ns
r
0.05
SKH00035BED
1.25
0.7
0.1
0.35
0.1
1
0 to 0.1
2
+0.1
0.16
0.5
0.1
–0.06
5˚
SMini2-F1 Package
Min
Typ
Max
0.55
100
60
5
Output Pulse
t
rr
I
F
t
I
0.1 I
rr
R
I
100 mA
F
I
100 mA
R
R
100
L
Unit: mm
0.1
Unit
V
A
pF
ns
1