Schottky Barrier Diodes (SBD)
MA2SD31
Silicon epitaxial planar type
For super high speed switching
■ Features
• I
= 200 mA rectification is possible.
F(AV)
• Low forward voltage: V
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Peak forward current
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Reverse current
Forward voltage
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
4. * : t
measurement circuit
rr
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: August 2006
This product complies with the RoHS Directive (EU 2002/95/EC).
< 0.47 V (at I
= 200 mA)
F
F
= 25°C
a
Symbol
Rating
V
30
R
V
30
RRM
I
200
F(AV)
I
300
FM
I
1
FSM
T
125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
I
V
R1
R
I
V
R2
R
= 200 mA
V
I
F
F
C
V
t
R
= I
t
I
rr
F
= 10 mA, R
I
rr
Bias Application Unit (N-50BU)
A
SKH00131BED
Unit
V
V
mA
mA
A
°C
°C
Marking Symbol: 8F
Conditions
= 10 V
= 30 V
= 0 V, f = 1 MHz
= 100 mA
R
= 100 Ω
L
Wave Form
Analyzer
(SAS-8130)
V
R
= 50 Ω
R
i
+0.05
0.60
–0.03
+0.05
0.80
–0.03
1
0.01
±0.01
2
0.30
±0.05
5˚
SSMini2-F1 Package
Min
Typ
Max
20
200
0.38
0.47
25
2
Input Pulse
Output Pulse
t
t
p
r
t
10%
I
F
90%
= 2 µs
= 100 mA
t
I
p
F
= 0.35 ns
= 100 mA
t
I
r
R
δ = 0.05
= 100 Ω
R
L
Unit: mm
+0.05
0.12
–0.02
+0
0
–0.05
1: Anode
2: Cathode
Unit
µA
V
pF
ns
t
rr
t
= 10 mA
I
rr
1