Rectifier Diodes
MA6X129
Silicon epitaxial planar type
For small power current rectification
■ Features
• Three isolated elements are contained in one package, allowing
high-density mounting
• Allowing high voltage rectification
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Output current
Single
Triple
Repetitive peak forward Single
current
Triple
Single
Non-repetitive peak
*
forward surge current
Triple
Junction temperature
Storage temperature
Note) * : t = l s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 3 MHz.
Publication date: March 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA129)
= 25°C
a
Symbol
Rating
V
200
R
V
200
RM
I
200
O
100
I
600
FRM
200
I
1 000
FSM
350
T
150
j
−55 ∼ +150
T
stg
= 25°C ± 3°C
a
Symbol
= 200 mA
V
I
F
F
= 200 V
I
V
R
R
= 0 V, f = 1 MHz
C
V
t
R
Note) The part number in the parenthesis shows conventional part number.
SKC00003BED
2.90
(0.95)
4
3
+0.10
0.30
–0.05
+0.10
0.50
–0.05
10˚
Unit
V
V
mA
mA
EIAJ : SC-74
Marking Symbol: M4F
mA
Internal Connection
°C
°C
Conditions
Unit: mm
+0.20
–0.05
+0.10
0.16
1.9
±0.1
–0.06
(0.95)
5
6
2
1
1 : Cathode 1
4 : Anode 3
2 : Cathode 2
5 : Anode 2
3 : Cathode 3
6 : Anode 1
Mini6-G1 Package
6
1
5
2
4
3
Min
Typ
Max
1.2
200
4.5
Unit
V
nA
pF
1