PIN diodes
MA27P02
Silicon epitaxial planar type
For high frequency switch
■ Features
• Small terminal capacitance C
• Small forward dynamic resistance r
• Ultraminiature package and surface mounting type
1.0 mm × 0.6 mm (height: 0.52 mm)
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Forward current
*
Power dissipation
Junction temperature
Storage temperature
Note) * : With a glass epoxy PC board
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Forward dynamic resistance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. * : r
measurement device ; agilent model 4291B
f
Publication date: March 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
t
f
= 25°C
a
Symbol
Rating
V
60
R
I
100
F
P
150
D
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 10 mA
V
I
F
F
= 60 V
I
V
R
R
= 1 V, f = 1 MHz
C
V
t
R
= 10 mA, f = 100 MHz
*
r
I
f
F
SKL00008BED
+0.05
0.27
–0.02
2
1
0.60
±0.05
5°
Unit
V
mA
mW
°C
°C
Marking Symbol: Y
Conditions
Unit: mm
+0.05
0.13
–0.02
1: Anode
2: Cathode
SSSMini2-F2 Package
Min
Typ
Max
Unit
1.0
100
nA
0.5
pF
2.0
V
Ω
1