Photo IC
PNA4601M
Photodiode with Photodetection Function
For infrared remote control systems
Features
Extension distance: 8 m or more
External parts not required
Adoption of visible light cutoff resin
Absolute Maximum Ratings T
Parameter
Operating supply voltage
Power dissipation
Operating ambient temperature
Storage temperature
Soldering temperature
*
Note) * : Less than 5 s
Electrical-Optical Characteristics T
Parameter
Operating supply voltage
Supply current
* 1
Maximum reception distance
* 2
Low level output voltage
High level output voltage
* 1
Low level pulse width
* 1
High level pulse width
Center frequency
Load resistance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. * 1: Burst wave form figure 1.
* 2: Constant wave form Figure 2. .
Carrier frequency: f
400 µs
Publication date: October 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol
Rating
V
– 0.5 to +7
CC
P
200
D
T
–20 to +75
opr
T
–40 to +100
stg
T
260
sol
= 25°C±3°C
a
Symbol
V
CC
I
No signal condition
CC
L
max
V
L ≤ 8.0 m, I
OL
V
No signal condition, I
OH
T
L = 8.0 m, 16 pulse
WL1
T
L = 0.2 m, 16 pulse, T
WL2
T
L = 8.0 m, 16 pulse
WH
f
O
R
L
O
400 µs
Figure 1
SHE00064AEK
Unit
V
mW
°C
°C
°C
Conditions
= 400 μA
OL
= −10 μA
OH
= 65°C ± 3°C
a
Carrier frequency: f
20 ms
Figure 2
Min
Typ
Max
Unit
4.7
5.0
5.3
1.8
2.4
3.0
mA
8.0
10.0
0.35
0.5
4.75
4.80
200
400
600
100
700
200
400
600
36.7
kHz
15
20
25
kW
O
V
m
V
V
μs
μs
μs
1