Panasonic Multi Chip Discrete UP05C8B Specifications

Multi Chip Discrete
UP05C8B
Silicon NPN epitaxial planar type (Tr)
Silicon epitaxial planar type (CCD load device)
For CCD output circuits
 Features
 Two elements incorporated into one package (Tr + CCD load device)
 Costs can be reduced through downsizing of the equipment and reduction of
the number of parts.
 Basic Part Number
 2SC3931 + CCD load device
 Absolute Maximum Ratings T
Parameter
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Tr
Emitter-base voltage
(Collector open)
Collector current
CCD
Limiting element voltage
load
Limiting element current
device
Total power dissipation
Junction temperature
Overall
Storage temperature
Note) * : Measuring on substrate at 17 mm × 10 mm × 1 mm
Publication date: November 2005
= 25°C
a
Symbol Rating
V 30
CBO
V 20
CEO
V 3
EBO
I 15
C
V 40
max
I 10
max
* P 125
T
T 125
j
T –55 to +125
stg
Unit
1: Emitter
V
2: Base
3: Gate
V
Marking Symbol: 4F
V
Internal Connection
mA
V
mA
mW
°C
°C
SJJ00333AED
+0.05
0.20
(0.30) 0.10
–0.02
6 5 4
5°
1 2 3
(0.50)(0.50)
1.00
±0.05
1.60
±0.05
1番ピン端子表示
5°
4: Source
5: Drain
6: Collector
SSMini6-F1 Package
(C) (D) (S)
6 5
4
Tr
FET
1 2 3
(E) (B) (G)
Unit: mm
±0.02
1