Switching Diodes
MAU2111
Silicon epitaxial planar type
For high speed switching circuits
Features
Optimum for high-density mounting
Short reverse recovery time t
Small terminal capacitance C
Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Forward current (Average)
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Note) * : t = 1 s
Electrical Characteristics T
Parameter
Forward current
Reverse voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
measurement circuit
rr
Pulse Generator
(PG-10N)
R
= 50 Ω
s
Publication date: September 2006
This product complies with RoHS Directive (EU 2002/95/EC).
rr
t
= 25°C
a
Symbol
Rating
V
80
R
V
80
RM
I
100
F
I
225
FM
*
I
500
FSM
T
150
j
T
–55 to +150
stg
= 25°C±3°C
a
Symbol
V
I
= 100 mA
F
F
V
I
= 100 mA
R
R
I
V
= 75 V
R
R
C
V
= 0, f = 1 MHz
t
R
I
= 10 mA, V
F
t
rr
R
= 100 W
L
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
Unit
V
5°
V
mA
mA
mA
1: Anode
°C
2: Cathode
°C
Marking Symbol: 11
Conditions
= 6 V, I
= 0.1 I
,
R
rr
R
Input Pulse
t
t
p
r
t
10%
90%
V
R
t
= 2 µs
p
t
= 0.35 ns
r
δ = 0.05
SKF00070AED
0.60
+0.05
0.13
±0.05
−0.02
1
2
+0.05
0.2
−0.02
USSMini2-F1 Package
Min
Typ
Max
0.95
1.2
80
100
0.6
2
3.0
Output Pulse
t
I
rr
F
t
I
= 0.1 I
rr
R
I
= 10 mA
F
V
= 6 V
R
R
= 100 Ω
L
Unit: mm
Unit
V
V
nA
pF
ns
1