Panasonic MAS3132E Specification Sheet

Switching Diodes
MAS3132E
Silicon epitaxial planar type
For high-speed switching circuits
■ Features
• Two elements are contained in one package, allowing high-
density mounting
• Short reverse recovery time t
• Small terminal capacitance C
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current Single
Double
Peak forward current Single
Double
Non-repetitive peak Single
*
forward surge current Double
Junction temperature
Storage temperature
Note) * : t = 1 s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. * : t measurement circuit
rr
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: November 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
rr
t
= 25°C
a
Symbol Rating
V 80
R
V 80
RM
I 100
F
150
I 225
FM
340
I 500
FSM
750
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 100 mA
V I
F F
= 100 µA
V I
R R
= 75 V
I V
R R
= 0 V, f = 1 MHz
C V
t R
= 10 mA, V
t I
rr F
= 0.1 I
I
rr
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
SKF00065BED
+0.05
0.33
–0.02
+0.05
0.23
–0.02
5˚
Unit
V
V
mA
mA
Marking Symbol: MU
mA
Internal Connection
°C
°C
Conditions
= 6 V
R
= 100 Ω
, R
R L
Input Pulse
t t
p
r
t
10%
I
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
Unit: mm
+0.05
0.10
–0.02
3
1 2
(0.40) (0.40)
0.80 ±0.05
1.20 ±0.05
1: Anode 1
2: Anode 2
3: Cathode 1, 2
SSSMini3-F1 Package
3
1 2
Min Typ Max
1.2
80
100
2
3
Output Pulse
t
rr
F
t
= 0.1 I
I
rr R
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
Unit
V
V
nA
pF
ns
1