Switching Diodes
MAS3132D
Silicon epitaxial planar type
For switching circuits
■ Features
• Two elements are contained in one package, allowing high-
density mounting
• Short reverse recovery time t
• Small terminal capacitance C
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Single
Double
Peak forward current Single
Double
Non-repetitive peak
Single
*
forward surge current
Double
Junction temperature
Storage temperature
Note) * : t = 1 s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. * : t
measurement circuit
rr
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: November 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
rr
t
= 25°C
a
Symbol
Rating
V
80
R
V
80
RM
I
100
F
150
I
225
FM
340
I
500
FSM
750
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 100 mA
V
I
F
F
= 100 µA
V
I
R
R
= 75 V
I
V
R
R
= 0 V, f = 1 MHz
C
V
t
R
= 10 mA, V
t
I
rr
F
= 0.1 I
I
rr
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
SKF00064BED
0.33
+0.05
0.23
–0.02
Unit
V
V
mA
mA
Marking Symbol: MO
mA
Internal Connection
°C
°C
Conditions
= 6 V
R
= 100 Ω
, R
R
L
Input Pulse
t
t
p
r
t
10%
I
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
+0.05
+0.05
0.10
–0.02
–0.02
3
1
2
(0.40)
(0.40)
0.80
±0.05
1.20
±0.05
5˚
1: Cathode 1
2: Cathode 2
3: Anode 1, 2
SSSMini3-F1 Package
3
1
2
Min
Typ
Max
1.2
80
100
15
10
Output Pulse
t
rr
F
t
= 0.1 I
I
rr
R
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
Unit: mm
Unit
V
V
nA
pF
ns
1