Zener Diodes
MALT062H
Silicon planar type
For ESD protection
Features
Electrostatic discharge ESD: ±30 kV
Four elements anode-common type
Absolute Maximum Ratings T
Parameter
* 1
Total power dissipation
Junction temperature
Storage temperature
* 2
Electrostatic discharge
Note) * 1 : P
= 150 mW achieved with a printed circuit board.
D
* 2 : Test method: IEC61000-4-2
(C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
Electrical Characteristics T
Parameter
Breakdown voltage
*
Reverse current
Terminal capacitance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. The temperature must be controlled 25°C for V
V
value measured at other temperature must be adjusted to V
BR
3. * : V
guaranted 20 ms after current flow.
BR
Publication date: September 2005
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol
Rating
P
150
D
T
150
j
T
–55 to +150
stg
ESD
±30
= 25°C±3°C
a
Symbol
V
I
= 1 mA
BR
R
I
V
= 4.0 V
R
R
C
V
= 0 V, f = 1 MHz
t
R
mesurement.
BR
BR
SKE00028AED
1 2
Unit
(0.51)
(0.80)
mW
1.60
°C
3°
°C
kV
1: Cathode 1
2: Cathode 2
3: Anode 1, 2
EIAJ: SC-81
Marking Symbol: 6.2E
Internal Connection
Conditions
Min
(25°C)
Unit: mm
0.28
±0.05
+0.05
0.12
–0.02
3
0.28
±0.05
(0.51)
(0.80)
+0.05
0.60
–0.03
+0.05
–0.03
SSMini3-F2 Package
3
1
2
Typ
Max
Unit
5.8
6.2
6.6
V
1.0
µA
55
pF
1