Panasonic MALS180XG Specification Sheet

Zener Diodes
MALS180XG
Silicon planar type
For ESD protection
 Overview
MALS180XG is optimal for cell phones and AV application, all types of
I/O circuits.
It is possible to protect against forward and reverse surges.
 Features
 High resistance to surge voltages: 15 kV guaranteed
 Low terminal capacitance C
retention of signal waveforms.
 Absolute Maximum Ratings T
Parameter
Repetitive peak forward current
* 1
Total power dissipation
* 2
Electrostatic discharge
Junction temperature
Storage temperature
Note) * 1: P = 150 mW achieved with a printed circuit board.
T
* 2: Test method: IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
 Electrical Characteristics T
Parameter
Zener voltage *
Zene operating resistance
Reverse current
Terminal capacitance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. The temperature must be controlled 25°C for V
V value measured at other temperature must be adjusted to V
Z
3. * : V guaranted 20 ms after current flow.
Z
Publication date: January 2009
This product complies with the RoHS Directive (EU 2002/95/EC).
for low loss, low distortion, and good
t
= 25°C
a
Symbol Rating
I 200
FRM
P 150
T
ESD ±15
T 150
j
T -55 to +150
stg
= 25°C±3°C
a
Symbol
V I = 5 mA
Z Z
R I = 5 mA
Z Z
I V = 13.0 V
R R
C V = 0 V, f = 1 MHz
t R
mesurement.
Z
(25°C)
Z
SKE00053AED
 Package
 Code
SSMini2-F4
 Pin Name
1: Cathode
2: Cathode
 Marking Symbol: SX
Unit
mA
mW
kV
°C
°C
Conditions Min Typ Max Unit
17.5 20.0
60
15
4
V
Ω
nA
pF
1