Zener Diodes
MALS180X
Silicon planar type
For ESD protection
Overview
MALS180X is optimal for cell phones and AV application, all types of
I/O circuits.
It is possible to protect against forward and reverse surges.
Features
High resistance to surge voltages: 15 kV guaranteed
Low terminal capacitance C
retention of signal waveforms.
Absolute Maximum Ratings T
Parameter
Repetitive peak forward current
* 1
Total power dissipation
* 2
Electrostatic discharge
Junction temperature
Storage temperature
Note) * 1: P
= 150 mW achieved with a printed circuit board.
T
* 2: Test method: IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
Electrical Characteristics T
Parameter
Zener voltage
*
Zene operating resistance
Reverse current
Terminal capacitance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. The temperature must be controlled 25°C for V
V
value measured at other temperature must be adjusted to V
Z
3. * : V
guaranted 20 ms after current flow.
Z
Publication date: April 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
for low loss, low distortion, and good
t
= 25°C
a
Symbol
Rating
I
200
FRM
P
150
T
ESD
±15
T
150
j
T
-55 to +150
stg
= 25°C±3°C
a
Symbol
V
I
= 5 mA
Z
Z
R
I
= 5 mA
Z
Z
I
V
= 13.0 V
R
R
C
V
= 0 V, f = 1 MHz
t
R
mesurement.
Z
(25°C)
Z
SKE00044AED
Package
Code
SSMini2-F1
Pin Name
1: Cathode
2: Cathode
Marking Symbol: SX
Unit
mA
mW
kV
°C
°C
Conditions
Min
Typ
Max
Unit
17.5
20.0
60
15
4
V
Ω
nA
pF
1