Switching Diodes
MA5J002E
Silicon epitaxial planar type
For high speed switching circuits
■ Features
• Includes 4 elements of cathode common connection
• Parts reduction is possible
• Ideal for surge voltage absorption
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
* 1
Forward current
* 1
Peak forward current
Non-repetitive peak forward
* 1, 2
surge current
Junction temperature
Operating ambient temperature
Storage temperature
Note) * 1: Value in single diode used.
* 2: t = 1 s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. * : t
measurement circuit
rr
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: November 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol
Rating
V
80
R
V
80
RM
I
100
F
I
225
FM
I
500
FSM
T
150
j
−25 to +105
T
opr
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 100 mA
V
I
F
F
= 100 µA
V
I
R
R
= 75 V
I
V
R
R
= 0 V, f = 1 MHz
C
V
t
R
= 10 mA, V
t
I
rr
F
= 0.1 I
I
rr
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
SKF00061BED
(0.65) (0.65)
5
1
5˚
Unit
V
V
mA
mA
mA
Marking Symbol: M5B
°C
°C
Internal Connection
°C
Conditions
= 6 V
R
= 100 Ω
, R
R
L
Input Pulse
t
t
r
p
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
Unit: mm
2.0
±0.1
4
2
3
0.2
±0.05
1: Anode 1
3: Anode 2
2: Cathode 1, 2, 3, 4
4: Anode 3
5: Anode 4
SMini5-F 1 Package
5
4
1
2
3
Min
Typ
Max
1.2
80
100
2
3
Output Pulse
t
rr
I
F
t
= 0.1 I
I
rr
R
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
0.7
±0.1
+0.1
0.16
–0.06
Unit
V
V
nA
pF
ns
1