Schottky Barrier Diodes (SBD)
MA3XD15
Silicon epitaxial planar type
For high frequency rectification
■ Features
• Low forward voltage: V
• Small reverse current: I
• Forward current (Average) I
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Non-repetitive peak forward
*2
surge current
Forward current (Average)
Junction temperature
Storage temperature
Note) * 1: Mounted on an alumina PC board
* 2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
Publication date: April 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
< 0.45 V
F
< 100 µA
R
= 1 A rectification is possible
F(AV)
= 25°C
a
Symbol
Rating
V
20
R
V
25
RRM
I
3
FSM
* 1
I
1.0
F(AV)
T
125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V
I
F
F
I
V
R
R
C
V
t
R
Unit
V
V
A
EIAJ: SC-59
A
Marking Symbol: M5N
°C
°C
Internal Connection
Conditions
= 1.0 A
= 20 V
= 0 V, f = 1 MHz
SKH00093CED
+0.10
0.40
–0.05
3
1
2
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
10˚
Mini3-G1 Package
3
1
2
Min
Typ
Max
0.45
100
120
Unit: mm
+0.10
0.16
–0.06
1: Anode
2: N.C.
3: Cathode
Unit
V
µA
pF
1