Panasonic MA3XD11 Specification Sheet

Schottky Barrier Diodes (SBD)
MA3XD11
Silicon epitaxial planar type
For high frequency rectification
■ Features
• Forward current (Average) I
• Low forward voltage V
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Non-repetitive peak forward
* 2
surge current
Junction temperature
Storage temperature
Note) * 1: Mounted on an alumina PC board
* 2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz.
Publication date: April 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
= 1 A rectification is possible
F(AV)
F
= 25°C
a
Symbol Rating
V 20
R
V 25
RRM
* 1
I 1.0
F(AV)
I 3
FSM
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V I
F F
I V
R R
C V
t R
Unit
V
V
A
A
EIAJ: SC-59
Marking Symbol: M6K
°C
°C
Internal Connection
Conditions
= 1.0 A
= 20 V
= 0 V, f = 1 MHz
SKH00091CED
+0.10
0.40
–0.05
3
1 2
(0.95) (0.95)
1.9 ±0.1
+0.20
2.90
–0.05
10˚
Mini3-G1 Package
3
1 2
Min Typ Max
0.45
200
180
Unit: mm
+0.10
0.16
–0.06
1: Anode
2: N.C.
3: Cathode
Unit
V
µA
pF
1