Fast Recovery Diodes (FRD)
MA3U649
Silicon planar type (cathode common)
For high-frequency rectification
■ Features
• Small U-type package for surface mounting
• Low-loss type with fast reverse recovery time t
• Cathode common dual type
■ Absolute Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse
surge voltage
Forward current (Average)
Non-repetitive peak forward
* 2
surge current
Junction temperature
Storage temperature
= 25°C
Note) * 1: T
C
* 2: Half sine-wave; 10 ms/cycle
■ Electrical Characteristics T
Parameter
Forward voltage
Repetitive peak reverse current
* 2
Reverse recovery time
* 1
Thermal resistance (j-c)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
= 25°C
2. * 1: T
C
* 2: t
measurement circuit
rr
50 Ω
Publication date: February 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
rr
Symbol
Rating
V
200
RRM
V
200
RSM
* 1
I
5
F(AV)
I
40
FSM
−40 to +150
T
j
−40 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V
I
F
F
I
V
RRM1
I
V
RRM2
t
I
rr
F
R
th(j-c)
50 Ω
D.U.T
5.5 Ω
■ Package
• Code
• Pin Name
Unit
V
V
A
A
°C
°C
Conditions
= 2.5 A, T
= 25°C
C
= 200 V, T
= 25°C
RRM
C
= 200 V, T
= 150°C
RRM
j
= 1 A, I
= 1 A
R
I
F
I
R
SKJ00014CED
U-G2
1: Anode
2: Cathode (Common)
3: Anode
Min
Typ
t
rr
0.1 × I
R
Max
Unit
0.98
V
µA
20
2
mA
30
ns
°C/W
12.5
1