Panasonic MA2YF80 Specification Sheet

Fast Recovery Diodes (FRD)
MA2YF80
Silicon epitaxial planar type
For high speed switching circuits
For strobe light circuits (high voltage rectification)
 Features
 High repetitive peak reverse voltage V
 Short reverse recovery time t
 Absolute Maximum Ratings T
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse surge voltage
Forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Note) * : 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time *
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. * : t measurement circuit
rr
Pulse Generator
(PG-10N)
R = 50 Ω
s
Publication date: October 2006
This product complies with RoHS Directive (EU 2002/95/EC).
RRM
rr
= 25°C
a
Symbol Rating
V 800
RRM
V 800
RSM
I 200
F
* I 1
FSM
T –40 to +150
j
T –40 to +150
stg
= 25°C±3°C
a
Symbol
V I = 200 mA
F F
I V
RRM1 RRM
I V
RRM2 RRM
C V = 0 V, f = 1 MHz
t R
I = 100 mA, I
F
t
rr
I = 20 mA, R
rr
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
R = 50 Ω
i
Unit
V
V
mA
A
°C
1: Anode
°C
2: Cathode
Marking Symbol: HB
Conditions
= 400 V
= 800 V
= 200 mA
R
= 100 Ω
L
Input Pulse
t t
r p
t
10%
90%
V
R
t = 2 µs
p
t = 0.35 ns
r
δ = 0.05
SKJ00016CED
0.80
1.6
±0.05
±0.1
1
2
0.45
±0.1
0.55
±0.1
0.16
5°
Mini2-F1 Package
Min Typ Max
2.5
1
20
2
20 45
Output Pulse
t
rr
I
F
t
I = 0.1 × I
rr R
I = I = 100 mA
F R
R = 100 Ω
L
Unit: mm
0 to 0.1
+0.1
–0.06
Unit
V
µA
pF
ns
1