Schottky Barrier Diodes (SBD)
MA2YD17
Silicon epitaxial planar type
For high frequency rectification
■ Features
• Reverse voltage V
= 100 V is guaranteed
R
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current (Average)
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. * : t
measurement circuit
rr
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: April 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol
Rating
V
100
R
V
100
RM
I
300
F(AV)
I
1.5
FSM
T
125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
= 300 mA
V
I
F
F
I
V
R
R
C
V
t
R
= I
t
I
rr
F
I
rr
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
Unit
V
V
mA
A
1: Anode
°C
2: Cathode
°C
Marking Symbol: 2T
Conditions
= 100 V
= 0 V, f = 1 MHz
= 100 mA
R
= 0.1 I
= 100 Ω
, R
R
L
Input Pulse
t
t
p
r
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKH00032BED
0.80
±0.05
1.6
±0.1
1
2
0.45
±0.1
0.55
±0.1
5˚
Mini2-F1 Package
Min
Typ
Max
0.50
0.58
200
100
7
Output Pulse
t
rr
I
F
t
= 0.1 I
I
rr
R
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
Unit: mm
0 to 0.1
+0.1
0.16
–0.06
Unit
V
µA
pF
ns
1