PIN diodes
MA2SP05
Silicon epitaxial planar type
For high frequency attenuator
■ Features
• High performance forward current I
namic resistance r
f
• Small terminal capacitance C
• Miniature package and surface mounting type
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Forward current
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Forward dynamic resistance
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: March 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
controlled forward dy-
F
t
= 25°C
a
Symbol
Rating
V
60
R
I
50
F
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 10 mA
V
I
F
F
= 60 V
I
V
R
R
= 0 V, f = 1 MHz
C
V
t
R
= 10 mA, f = 100 MHz
r
I
f
F
SKL00012BED
0.80
5˚
Unit
V
mA
°C
°C
EIAJ: SC-79
Marking Symbol: 6P
Conditions
Unit: mm
+0.05
0.60
–0.03
+0.05
0.12
–0.03
1
0.01
±0.01
2
0.30
±0.05
+0
0
–0.05
1: Anode
2: Cathode
SSMini2-F1 Package
Min
Typ
Max
Unit
1.0
100
2.4
5.5
+0.05
–0.02
V
nA
pF
Ω
1