Panasonic MA2S1010G Specification Sheet

Switching Diodes
MA2S1010G
Silicon epitaxial planar type
For switching circuits
■ Features
• High breakdown voltage: V
• Small terminal capacitance C
• Suitable for high-density mounting
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : t = 1 s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time *
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 20 MHz.
3. * : t measurement circuit
rr
Bias Application Unit N-50BU
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: October 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
= 250 V
R
t
= 25°C
a
Symbol Rating
V 250
R
V 250
RRM
I 100
F
I 225
FM
I 500
FSM
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
F F
I V
R
C V
t
t I
rr F
I
rr
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
■ Package
• Code
• Pin Name
■ Marking Symbol: 1P
Unit
V
V
mA
mA
mA
°C
°C
Conditions
= 70 mA
= 250 V
R
= 0 V, f = 1 MHz
R
= I = 10 mA
R
= 1 mA , R = 100 Ω
L
Input Pulse
t t
p
r
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKF00074AED
SSMini2-F4
1: Anode
2: Cathode
Min Typ
Output Pulse
t
rr
I
F
t
= 1 mA
I
rr
= I = 10 mA
I
F R
= 100 Ω
R
L
Max Unit
1.2 V
µA
1.0
3.0 pF
60 ns
1