Panasonic MA2S077G Specification Sheet

Band Switching Diodes
MA2S077G
Silicon epitaxial planar type
For band switching
■ Features
• Low forward dynamic resistance r
• Less voltage dependence of diode capacitance C
• SS-Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Forward current
Operating ambient temperature
Storage temperature
Note) * : Maximum ambient temperature during operation.
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Diode capacitance
Forward dynamic resistance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. * : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
Publication date: October 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
f
= 25°C
a
Symbol Rating
V 35
R
I 100
F
−25 to +85
*
T
opr
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
F F
I V
R
C V
D
*
r I
f F
■ Package
• Code
D
• Pin Name
■ Marking Symbol: S
Unit
V
mA
°C
°C
Conditions
= 100 mA
= 33 V
R
= 6 V, f = 1 MHz
R
= 2 mA, f = 100 MHz
SKG00018AED
SSMini2-F4
1: Anode
2: Cathode
Min Typ
0.92
0.01 100.00
0.9
0.65
Max Unit
1.00 V
nA
1.2 pF
Ω
0.85
1