Fast Recovery Diodes (FRD)
MA2DF31
Silicon mesa type
For high frequency rectification
Features
Super high speed switching characteristic: t
Low noise type
Absolute Maximum Ratings T
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse surge voltage
* 1
Forward current (Average)
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Note) * 1: T
= 25°C
C
* 2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Reverse recovery time
*
Thermal resistance (j-c)
Thermal resistance (j-a)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of
current from the operating equipment.
3. * : t
measurement circuit
rr
Publication date: December 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
= 20 ns (typ.)
rr
= 25°C
a
Symbol
Rating
V
300
RRM
V
300
RSM
I
5
F(AV)
* 2
I
30
FSM
T
+150
j
T
-40 to +150
stg
= 25°C±3°C
a
Symbol
V
I
= 5 A
F
F
I
V
= 300 V
RRM
RRM
I
= 0.5 A, I
F
t
rr
I
= 0.25 A
rr
R
th(j-c)
R
th(j-a)
50 Ω
50 Ω
D.U.T.
5.5 Ω
SKJ00023AED
Package
Code
TO-220D-B1
Pin Name
1: Cathode
2: Anode
Unit
V
Marking Symbol: MA2DF31
V
A
A
°C
°C
Conditions
= 1.0 A
R
t
rr
I
F
I
R
Min
Typ
Max
Unit
1.0
1.3
20
mA
20
30
3.0
°C/W
63
°C/W
0.25 × I
R
V
ns
1