PIN diodes
MA27P11
Silicon epitaxial planar type
For high frequency switch
■ Features
• Low terminal capacitance
• Low forward dynamic resistance
• SSS-Mini type 2-pin package
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Forward current
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Forward dynamic resistance
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: April 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol
Rating
V
6 0
R
I
5 0
F
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 1 mA
V
I
F1
F
= 10 mA
V
I
F2
F
= 60 V
I
V
R
R
= 0 V, f = 1 MHz
C
V
t
R
= 1 mA, f = 100 MHz
r
I
f1
F
= 10 mA, f = 100 MHz
r
I
f2
F
SKL00014AED
+0.05
0.27
–0.02
1
2
0.60
±0.05
5°
Unit
V
mA
°C
°C
Marking Symbol: F
Conditions
Unit: mm
+0.05
0.12
–0.02
1: Anode
2: Cathode
SSSMini2-F2 Package
Min
Typ
Max
Unit
0.76
0.85
V
0.85
1.00
V
1.0
100
nA
0.55
0.80
pF
Ω
1.6
3.0
Ω
0.9
1.5
1