PIN Diodes
MA27P06
Silicon planar type
For high frequency switch
■ Features
• Low terminal capacitance: C
• Low forward dynamic resistance: r
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Forward current
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Forward dynamic resistance
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: September 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
≤ 0.6 pF
t
≤ 1.2 Ω
f
= 25°C
a
Symbol
Rating
V
60
R
I
100
F
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 10 mA
V
I
F
F
= 60 V
I
V
R
R
= 1 V, f = 1 MHz
C
V
t
R
r
I
= 10 mA, f = 100 MHz
f
F
SKL00015AED
+0.05
0.27
–0.02
1
2
Unit
0.60
±0.05
V
5°
mA
°C
°C
Marking Symbol: M
Conditions
Unit: mm
+0.05
0.12
–0.02
1: Anode
2: Cathode
SSSMini2-F2 Package
Min
Typ
Max
Unit
0.85
1.0
V
1.0
100
nA
0.45
0.6
pF
Ω
0.80
1.2
1