Schottky Barrier Diodes (SBD)
MA27D30
Silicon epitaxial planar type
For super high speed switching
■ Features
• Small reverse current: I
• Optimum for high frequency rectification because of its short
reverse recovery time t
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Peak forward current
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
4. * : t
measurement circuit
rr
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date:January 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
< 2 µA (at V
= 30 V)
R
R
.
rr
= 25°C
a
Symbol
Rating
V
30
R
V
30
RRM
I
100
F(AV)
I
200
FM
I
1
FSM
T
125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V
I
F1
F
V
I
F2
F
I
V
R1
I
V
R2
C
V
t
t
I
rr
F
I
rr
Bias Application Unit (N-50BU)
A
Unit
V
V
mA
mA
A
°C
Marking Symbol: 8N
°C
Conditions
= 10 mA
= 100 mA
= 10 V
R
= 30 V
R
= 0 V, f = 1 MHz
R
= I
= 100 mA
R
= 10 mA, R
= 100 Ω
L
Wave Form
Analyzer
(SAS-8130)
V
R
= 50 Ω
R
i
SKH00134BED
+0.05
+0.05
0.27
0.12
–0.02
–0.02
1
2
0.60
±0.05
5°
SSSMini2-F2 Package
Min
Typ
Max
0.38
0.44
0.51
0.58
0.3
9
1
Input Pulse
Output Pulse
t
t
p
r
t
10%
I
F
90%
= 2 µs
= 100 mA
t
I
p
F
= 0.35 ns
= 100 mA
t
I
r
R
δ = 0.05
= 100 Ω
R
L
Unit: mm
1: Anode
2: Cathode
Unit
V
V
µA
µA
2
pF
ns
t
rr
t
= 10 mA
I
rr
1