PIN diodes
MA26P02
Silicon epitaxial planar type
For high frequency switch
Features
Features
Small terminal capacitance C
Small terminal capacitance C
t
Low forward dynamic resistance r
Low forward dynamic resistance r
Low forward dynamic resistance r
Low forward dynamic resistance r
Miniature package and surface mounting type
Miniature package and surface mounting type
Absolute Maximum Ratings
Absolute Maximum Ratings
Parameter
Reverse voltage
Forward current
Junction temperature
Storage temperature
Electrical Characteristics
Electrical Characteristics
Parameter
Forward voltage
Reverse current
Terminal capacitance
Forward dynamic resistance
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: May 2005
This product complies with the RoHS Directive (EU 2002/95/EC).
f
f
T
= 25
= 25
°C
a
a
a
Symbol
Rating
V
60
R
I
100
F
T
T
T
150
j
j
T
T
T
–55 to +150
stg
stg
T
= 25
= 25
°C±3°C
a
a
a
Symbol
V
V
V
I
= 10 mA
F
F
F
I
V
= 60 V
= 60 V
R
R
R
R
C
V
= 1 V, f = 1 MHz
= 1 V, f = 1 MHz
t
R
R
R
r
r
r
I
= 10 mA, f = 100 MHz
f
f
F
SKL00019AED
2
1.00
±0.05
Unit
V
mA
°C
°C
1: Anode
2: Cathode
Marking Symbol: P2
Conditions
Min
Unit: mm
0.01
±0.005
1
0.39
+0.01
−0.03
0.25
0.25
±0.05
±0.05
2
1
0.65
0.05
±0.01
±0.03
ML-2-N1 Package
Typ
Max
Unit
1.0
V
100
nA
0.5
pF
2.0
Ω
1