Fast Recovery Diodes (FRD)
MA24F70
Silicon epitaxial planar type
For high speed switching circuits
Features
Super high speed switching characteristic: t
Low impedance by clip bonding package (TMP)
Absolute Maximum Ratings T
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse surge voltage
* 1
Forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Note) * 1: Mounted on an alumina PC board
* 2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of
current from the operating equipment.
3. * : t
measurement circuit
rr
Publication date: November 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
= 15 ns (typ.)
rr
= 25°C
a
Symbol
Rating
V
700
RRM
V
700
RSM
I
1.0
F
* 2
I
20
FSM
T
-40 to +150
j
T
-40 to +150
stg
= 25°C±3°C
a
Symbol
V
I
= 1.0 A
F
F
I
V
= 700 V
RRM
RRM
C
V
= 0 V, f = 1 MHz
t
R
I
= 0.5 A, I
F
t
rr
I
= 0.25 A
rr
50 Ω
50 Ω
D.U.T.
5.5 Ω
SKJ00022AED
Package
Code
TMiniP2-F1
Pin Name
1: Anode
2: Cathode
Unit
V
Marking Symbol: H1
V
A
A
°C
°C
Conditions
= 1.0 A
R
t
rr
I
F
I
R
Min
Typ
Max
Unit
1.3
1.7
20
mA
25
15
45
0.25 × I
R
V
pF
ns
1