Fast Recovery Diodes (FRD)
MA24F41
Silicon epitaxial planar type
For high speed switching circuits
Features
Super high speed switching characteristic (t
At the same time as lowering the wiring inductance and increasing the peak
surge forward current, the resistance to surge damage at power on has been
increased by adopting clip connection package (TMP).
Absolute Maximum Ratings T
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse surge voltage
* 1
Forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Note) * 1: Mounted on an alumina PC board
* 2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3. * : t
measurement circuit
rr
50 Ω
Publication date: February 2007
This product complies with RoHS Directive (EU 2002/95/EC).
= 15 nsec typ.)
rr
= 25°C
a
Symbol
Rating
V
400
RRM
V
400
RSM
I
1.0
F
* 2
I
20
FSM
T
–40 to +150
j
T
–40 to +150
stg
= 25°C±3°C
a
Symbol
V
I
= 800 mA
F
F
I
V
= 400 V
RRM
RRM
C
V
= 0 V, f = 1 MHz
t
R
I
= 0.5 A, I
F
t
rr
I
= 0.25 A
rr
50 Ω
D.U.T
5.5 Ω
SKJ00018AED
2.40
1
2
1.75
Unit
V
5°
V
A
A
1 : Anode
°C
2 : Cathode
°C
Marking Symbol: G2
Conditions
= 1.0 A
R
I
F
I
R
Unit: mm
0.15
±0.10
±0.05
±0.05
TMiniP2-F1 Package
Min
Typ
Max
1.0
1.3
20
30
15
45
t
rr
0.25 × I
R
Unit
V
mA
pF
ns
1