Panasonic MA24D58 Specification Sheet

Schottky Barrier Diodes (SBD)
MA24D58
Silicon epitaxial planar type
For high-frequency rectification in switching power supplies
For prevention of reverse current from batteries in mobile devices
 Overview
MA24D58 is optimal for on-board power supplies and power supplies in
mobile application.
 Features
 Forward current (Average) I
F(AV)
 Small reverse current I
R
 Panasonic's unique wireless bonding structure assures a highsurge resistance
(I = 50 A).
FSM
 Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
* 1
Forward current
Non-repetitive peak forward surge
* 2
current
Junction temperature
Storage temperature
Note) *1: Mounted on an alumina PC board (board: 20 mm × 50 mm × 0.8 t,
* 2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics T
Parameter
Forward current
Reverse current
* 4
Terminal capacitance
* 1, 4
Reverse recovery time
Thermal resistance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. * 1: t test Circuit
rr
*2: Mounted on an alumina PC board (board: 20 mm × 50 mm × 0.8 t, soldering land: 2.0 mm × 2.0 mm + 20 mm × 0.8 mm)
*3: Mounted on a glass epoxy PC board (board: 20 mm × 50 mm × 1.0 t, soldering land: 2.0 mm × 2.0 mm + 20 mm × 0.8 mm)
*4: Design guaranteed
Publication date: April 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
= 3.0 A rectification is possible
= 25°C
a
Symbol Rating
V 60
R
V 60
RM
I 3.0
F
I 50
FSM
T 150
j
T –40 to +150
stg
soldering land: 2.0 mm × 2.0 mm + 20 mm × 0.8 mm)
= 25°C±3°C
a
Symbol
V I = 3.0 A
F F
I V = 60 V
R R
C V = 10 V, f = 1 MHz
t R
I = I
F
t
rr
R = 100 W
L
* 2, 4
R
Mounted on an alumina PC board
th(j-a)
* 3, 4
R
Mounted on a glass epoxy PC board
th(j-a)
Bias Application Unit (N-50BU)
A
Pulse Generator Wave Form Analyzer
(PG-10N) (SAS-8130)
R = 50 Ω R = 50 Ω
s i
 Package
 Code
TMiniP2-F1
 Pin Name
 Marking Symbol: 6T
Unit
V
V
A
A
°C
°C
Conditions
= 100 mA, I = 10 mA
R rr
Input Pulse
t
t
r p
t
10%
90%
V
R
t = 2 µs
p
t = 0.35 ns
r
δ = 0.05
SKH00224AED
1: Anode
2: Cathode
Min Typ Max
0.5 0.6
11 150
440
31
55
110
Output Pulse
t
I rr
F
t
I = 10 mA
rr
I = I = 100 mA
F R
R = 100 Ω
L
Unit
V
µA
pF
ns
°C/W
1