Panasonic MA24D52 Specification Sheet

Schottky Barrier Diodes (SBD)
MA24D52
Silicon epitaxial planar type
For rectification
 Features
 Forward current (Average) I
F(AV)
 Extremely small reverse current I
 Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current (Average) *
Non-repetitive peak forward surge
current
Junction temperature
Storage temperature
Note) * : 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics T
Parameter
Forward current
Reverse current
Terminal capacitance
* 1
Reverse recovery time
Thermal resistance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. * 1: t test Circuit
rr
Pulse Generator
(PG-10N)
R = 50 Ω
s
* 2: Mounted on an alumina PC board (board: 50 mm × 50 mm × 0.8 t, soldering land: 1.4 mm × 2.1 mm)
* 3: With a glass epoxy PC board (board: 50 mm × 20 mm × 1.0 t, soldering land: 2.0 mm × 2.0 mm + 20 mm × 0.8 mm)
Publication date: March 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
= 3.0 A rectification is possible
R
= 25°C
a
Symbol Rating
V 40
R
V 40
RM
I 3.0
F(AV)
I 60
FSM
T 150
j
T -40 to +150
stg
= 25°C±3°C
a
Symbol
V I = 3.0 A
F F
I V = 40 V
R R
C V = 10 V, f = 1 MHz
t R
I = I = 100 mA, I
F R
t
rr
R = 100 W
L
* 2
R
th(j-a)
* 3
R
th(j-a)
R
th(j-l)
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
R = 50 Ω
i
SKH00159AED
2.40
1
Unit
2
V
1.75
V
5°
A
A
°C
1: Anode
°C
2: Cathode
Marking Symbol: 5T
Conditions Min
= 10 mA
rr
Input Pulse Output Pulse
t
t
r p
t
10%
I
F
90%
V
R
t = 2 µs I
p F
t = 0.35 ns R
r
δ = 0.05
Unit: mm
0.15
±0.10 ±0.05
±0.05
TMiniP2-F1 Package
Typ Max Unit
0.48 0.53 V
50
mA
75 pF
25 ns
55
°C/W
210
10
t
rr
t
I = 10 mA
rr
= I = 100 mA
R
= 100 Ω
L
1