Panasonic MA24D51 Specification Sheet

Schottky Barrier Diodes (SBD)
MA24D51
Silicon epitaxial planar type
For rectifi cation
 Features  Features

 Allowing low-profi le mounting  Allowing low-profi le mounting

 Forward current (Average) I  Forward current (Average) I

F(A V)
 Low forward voltage V  Low forward voltage V Low forward voltage V Low forward voltage V

F F
 Absolute Maximum Ratings  Absolute Maximum Ratings

Parameter
Reverse voltage
Maximum peak reverse voltage
* 1
Forward current (Average)
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Note) * 1: Mounted on an alumina PC board
* 2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics  Electrical Characteristics

Parameter
Forward voltage
Reverse current
Thermal resistance (j-a) *
Thermal resistance (j-l)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. * : Mounted on an alumina PC board
Publication date: September 2006
This product complies with the RoHS Directive (EU 2002/95/EC).
= 3 A rectifi cation is possible
T = 25 = 25 °C
a a a
Symbol Rating
V 40
R
V V V 40
RM RM
I 3.0
F(A V)
* 2
I 60
FSM
T T T 150
j j
T T T –40 to +150
stg stg
T = 25 = 25 °C±3°C
a a a
Symbol
V V V I = 3.0 A
F F F
I V = 40 V = 40 V
R R R R
R R R
th(j-a) th(j-a)
R R R
th(j-l) th(j-l)
SKH00154AED
2.40
±0.10
1
2
Unit
1.75
±0.05
V
5°
V
A
A
°C
1: Anode
°C
2: Cathode
Marking Symbol: 5S
Conditions Min
Unit: mm
0.15
±0.05
TMiniP2-F1 Package
Typ Max Unit
0.37 0.42 V
2 mA
60
°C/W
10
°C/W
1